High-Resolution Ion Implantation from keV to MeV
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چکیده
منابع مشابه
Influence of nitrogen ion implantation on the nanostructure and corrosivity of Ni/stainless steel substrates
Ion implantation is a surface modification technology to produce new material on the surface by impingement of high energy ions from the ion accelerator. In this work, AISI 304 stainless steels were coated with 90 nm Ni film by electron beam deposition and implanted by a flow of 5×1017 N cm−2 at 400 K temperature with different implantation energies of 10, 20, 30 and 40 keV. The prepared sample...
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High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer ...
متن کاملInitial Commissioning of the Isac Rib Facility
Construction began in 1995 on ISAC, a radioactive ion beam (RIB) and accelerator facility at TRIUMF that utilises the ISOL (on-line isotope separation) production method. ISAC includes: a new building, a beam line with adequate shielding to transport up to 100 uA of 500 MeV protons to two target/ion-source stations, remote handling facilities for the targets, a high-resolution mass-separator, l...
متن کاملVacancy and interstitial depth profiles in ion-implanted silicon
An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...
متن کاملThe effect of implantation, energy, and dose on extended defect formation for MeV phosphorus implanted silicon
The effect of dose and energy on postannealing defect formation, for high energy ~MeV! phosphorus implanted into epitaxially grown silicon, has been studied by etch pits and transmission electron microscopy ~TEM!. The phosphorus dose was varied from 1310 to 5310 cm and the energy was varied from 180 to 5000 keV. After implantation, the wafers were processed through subsequent annealing cycles w...
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